Developing treatment apparatus and developing treatment method

ABSTRACT

The present invention is a developing treatment apparatus for performing development by supplying a developing solution to a substrate having a front surface coated with a positive resist or a negative resist and then subjected to exposure wherein a movable cup is raised to introduce one of scattering developing solutions for the positive and negative resists into an inner peripheral flow path of a cup and the movable cup is lowered to introduce the other of scattering developing solutions for the positive and negative resists into an outer peripheral flow path of the cup, and the developing solution introduced into the inner peripheral flow path and the developing solution introduced into the outer peripheral flow path are separately drained.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.14/022,434 filed on Sep. 10, 2013, which is based upon and claims thebenefit of priority of Japanese Patent Application No. 2012-201117,filed in Japan on Sep. 13, 2012, and Japanese Patent Application No.2013-162536, filed in Japan on Aug. 5, 2013, the entire contents ofwhich are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a developing treatment apparatus and adeveloping treatment method which supply a developing solution to asubstrate such as a semiconductor wafer or the like to perform treatmentthereon.

This application is based upon and claims the benefit of priority of theprior Japanese Patent Application No. 2012-201117, filed in Japan onSep. 13, 2012, and Japanese Patent Application No. 2013-162536, filed inJapan on Aug. 5, 2013, the entire contents of which are incorporatedherein by reference.

2. Description of the Related Art

In general, for example, in a photolithography process in amanufacturing process of a substrate such as a semiconductor wafer orthe like, for example, a resist coating treatment of applying a resistsolution onto the substrate to form a resist film, exposure treatment ofexposing a predetermined pattern to the resist film on the substrate, adeveloping treatment of supplying a developing solution onto thesubstrate after the exposure treatment to develop the resist film on thesubstrate and so on are performed.

In the resist coating treatment, a positive resist solution thatgenerates a pattern by removing a portion exposed during the developingtreatment or a negative resist solution that generates a pattern byremoving a portion not exposed during the developing treatment is used.The resist solutions are selectively used in consideration of aresolution required for generating the pattern, adhesion between thesubstrate and the resist solution, heat resistance of the resistsolution and so on. Further, in the developing treatment, a positivedeveloping solution that performs a developing treatment on thesubstrate coated with the positive resist solution or a negativedeveloping solution that performs a developing treatment on thesubstrate coated with the negative resist solution is used.

Generally, an alkaline solution is used as the positive developingsolution, and polar solvents such as a ketone-based solvent, anester-based solvent, an alcohol-based solvent, an amide-based solvent,an ether-based solvent and the like and a hydrocarbon-based solvent areused as the negative developing solution. Therefore, if a waste solutionof the positive developing solution and a waste solution of the negativedeveloping solution are mixed together, the waste solutions may causechemical reaction to make it impossible to appropriately perform wastesolution treatment.

As one example of a developing treatment apparatus that prevents mixtureof the waste solution of the positive developing solution and the wastesolution of the negative developing solution, a developing treatmentapparatus is known which is disclosed in Japanese Laid-open PatentPublication No. 2012-54469. According to this developing treatmentapparatus, a developing treatment with the positive developing solutionand a developing treatment with the negative developing solution areperformed in separate modules to prevent mixture of the waste solutionof the positive developing solution and the waste solution of thenegative developing solution.

In the developing treatment apparatus disclosed in the above document,however, since the developing treatment with the positive developingsolution and the developing treatment with the negative developingsolution are performed in the separate modules, the number of modulesequipped with the developing treatment apparatus increases.

SUMMARY OF THE INVENTION

The present invention has been made in consideration of the abovecircumstances, and has an object to enable reduction in size of adeveloping treatment apparatus capable of performing both a developingtreatment with a positive developing solution and a developing treatmentwith a negative developing solution by reducing the number of modulesinstalled therein.

To achieve the above object, the present invention is a developingtreatment apparatus for performing development by supplying a developingsolution to a substrate having a front surface coated with a positiveresist or a negative resist and then subjected to exposure, thedeveloping treatment apparatus including:

a substrate holding part that horizontally holds the substrate;

a rotary drive mechanism that rotates the substrate holding part arounda vertical axis;

a positive developing solution supply nozzle that supplies a developingsolution for the positive resist to the front surface of the substrateheld by the substrate holding part;

a negative developing solution supply nozzle that supplies a developingsolution for the negative resist to the front surface of the substrateheld by the substrate holding part;

a cup body that is formed in a bottomed circular shape with an upperside open and collects the developing solution scattering with rotationof the substrate;

a first developing solution drain pipeline that is connected to an outerperipheral side of the cup body and drains one of the developingsolutions for the positive resist and the negative resist collected bythe cup body;

a second developing solution drain pipeline that is connected to aninner peripheral side of the cup body and drains another of thedeveloping solutions for the positive resist and the negative resistcollected by the cup body;

a fixed cup that has a peripheral wall between an inner peripheral wallof the cup body and an outer peripheral wall of the cup body and isformed on a lower side of the substrate held by the substrate holdingpart;

a movable cup that has a partition between the peripheral wall of thefixed cup and the outer peripheral wall of the cup body, and introducesone of the scattering developing solutions for the positive resist andthe negative resist into an inner peripheral flow path surrounded by thepartition and the peripheral wall of the fixed cup by raising thepartition and introduces another of the scattering developing solutionsfor the positive resist and the negative resist into an outer peripheralflow path surrounded by the partition and the outer peripheral wall ofthe cup body by lowering the partition; and

a control unit that raises the movable cup when using the developingsolution for the positive resist and lowers the movable cup when usingthe developing solution for the negative resist.

According to another aspect, the present invention is a developingtreatment apparatus for performing development by supplying a developingsolution to a substrate having a front surface coated with a positiveresist or a negative resist and then subjected to exposure, thedeveloping treatment apparatus including:

a substrate holding part that horizontally holds the substrate;

a rotary drive mechanism that rotates the substrate holding part arounda vertical axis;

a positive developing solution supply nozzle that supplies a developingsolution for the positive resist to the front surface of the substrateheld by the substrate holding part;

a negative developing solution supply nozzle that supplies a developingsolution for the negative resist to the front surface of the substrateheld by the substrate holding part;

a cup body that is formed in a bottomed circular shape with an upperside open and collects the developing solution scattering with rotationof the substrate;

a first developing solution drain pipeline that is connected to an outerperipheral side of the cup body and drains one of the developingsolutions for the positive resist and the negative resist collected bythe cup body;

a second developing solution drain pipeline that is connected to aninner peripheral side of the cup body and drains another of thedeveloping solutions for the positive resist and the negative resistcollected by the cup body;

a fixed cup that has a peripheral wall between an inner peripheral wallof the cup body and an outer peripheral wall of the cup body and isformed on a lower side of the substrate held by the substrate holdingpart; and

a first drain device that is provided on the first developing solutiondrain pipeline and a second drain device that is provided on the seconddeveloping solution drain pipeline,

wherein the first drain device and the second drain device areconfigured to drain the one developing solution or the anotherdeveloping solution by driving one of the first drain device and thesecond drain device.

According to the present invention, it is possible to perform draintreatment of the developing solution without mixing the positivedeveloping solution and the negative developing solution in a developingtreatment apparatus installed in one module. Therefore, it is possibleto reduce the number of modules installed in the developing treatmentapparatus, thereby reducing the size of the developing treatmentapparatus.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic perspective view illustrating the whole processingsystem in which an exposure treatment apparatus is connected to acoating and developing treatment apparatus to which a developingtreatment apparatus according to an embodiment is applied;

FIG. 2 is a schematic plan view of the processing system in FIG. 1;

FIG. 3A is a schematic cross-sectional view illustrating a developingtreatment apparatus according to a first embodiment of the presentinvention;

FIG. 3B is a cross-sectional view illustrating another form of a fixedcup in the present invention, and FIG. 3C is an enlarged cross-sectionalview of a principal part of the fixed cup;

FIG. 3D is an enlarged cross-sectional view of a still another form ofthe fixed cup;

FIG. 4 is a schematic plan view of the developing treatment apparatusaccording to the first embodiment;

FIG. 5A is a schematic cross-sectional view of a developing solutionsupply nozzle and a waiting part for the developing solution supplynozzle of the developing treatment apparatus according to the firstembodiment;

FIG. 5B is a schematic cross-sectional view of a cleaning solutionsupply nozzle and a waiting part for the cleaning solution supply nozzleof the developing treatment apparatus according to the first embodiment;

FIG. 6A is a schematic cross-sectional view illustrating flow paths forthe developing solution and mist when a developing treatment with apositive developing solution is performed in the developing treatmentapparatus according to the first embodiment, and FIG. 6B is a schematiccross-sectional view illustrating flow paths for the developing solutionand mist when a developing treatment with a negative developing solutionis performed;

FIG. 7 is a schematic cross-sectional view illustrating a developingtreatment apparatus according to a second embodiment;

FIG. 8A is a schematic cross-sectional view illustrating flow paths forthe developing solution and mist when the developing treatment with thepositive developing solution is performed in the developing treatmentapparatus according to the second embodiment, and FIG. 8B is a schematiccross-sectional view illustrating flow paths for the developing solutionand mist when the developing treatment with the negative developingsolution is performed;

FIG. 9 is a schematic cross-sectional view illustrating a developingtreatment apparatus according to a third embodiment;

FIG. 10A is a schematic cross-sectional view illustrating flow paths forthe developing solution and mist when the developing treatment with thepositive developing solution is performed in the developing treatmentapparatus according to the third embodiment, and FIG. 10B is a schematiccross-sectional view illustrating flow paths for the developing solutionand mist when the developing treatment with the negative developingsolution is performed;

FIG. 11 is a schematic cross-sectional view illustrating a developingtreatment apparatus according to a fourth embodiment;

FIG. 12 is a schematic cross-sectional view illustrating a developingtreatment apparatus according to a fifth embodiment;

FIG. 13A is a schematic cross-sectional view illustrating flow paths forthe developing solution and mist when the developing treatment with thepositive developing solution is performed in the developing treatmentapparatus according to the fifth embodiment, and FIG. 13B is a schematiccross-sectional view illustrating flow paths for the developing solutionand mist when the developing treatment with the negative developingsolution is performed;

FIG. 14A is a schematic side view illustrating an example of a module inwhich two developing treatment apparatuses are provided;

FIG. 14B is a schematic plan view illustrating the example of the modulein which the two developing treatment apparatuses are provided;

FIG. 15A is a schematic side view illustrating another example of amodule in which two developing treatment apparatuses are provided;

FIG. 15B is a schematic plan view illustrating the other example of themodule in which the two developing treatment apparatuses are provided;

FIG. 16 is a schematic plane view illustrating a backflow preventionmechanism for drainage;

FIG. 17A is a flowchart, and FIGS. 17B-17J are schematic views,illustrating operation aspects of a movable cup and support pinssupporting a wafer when the positive developing treatment in thisinvention is continuously performed;

FIG. 18A is a flowchart, and FIGS. 18B-18H are schematic views,illustrating operation aspects of the movable cup and the support pinssupporting a wafer when the negative developing treatment in thisinvention is continuously performed;

FIG. 19A is a flowchart, and FIGS. 19B-19I are schematic views,illustrating operation aspects of the movable cup and the support pinssupporting a wafer when the negative developing treatment is performedafter the positive developing treatment in this invention; and

FIG. 20A is a flowchart, and FIGS. 20B-201 are schematic views,illustrating operation aspects of the movable cup and the support pinssupporting a wafer when the positive developing treatment is performedafter the negative developing treatment in this invention.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of this invention will be described based onthe accompanying drawings. Here, a case where a developing treatmentapparatus according to this invention is applied to a processing systemthat performs coating, developing and exposure treatment will bedescribed.

This processing system includes, as illustrated in FIG. 1 and FIG. 2, acarrier station 1 to transfer in/out a carrier 10 that seals and housesa plurality of, for example, 25 semiconductor wafers W (hereinafter,referred to as wafers W) being substrates, a treatment section 2 thatperforms resist coating, developing treatments and so on the wafer Wtaken out of the carrier station 1, an exposure section 4 that performsliquid-immersion exposure on the front surface of the wafer W with aliquid layer transmitting light formed on the front surface of the waferW, and an interface section 3 that is connected between the treatmentsection 2 and the exposure section 4 and delivers the wafer W.

In the carrier station 1, a mounting part 11 capable of mounting aplurality of carriers 10 side by side thereon, an opening/closing part12 provided in a front wall surface as seen from the mounting part 11,and a delivery device A1 to take the wafer W out of the carrier 10 viathe opening/closing part 12 are provided.

The interface section 3 is composed of a first transfer chamber 3A and asecond transfer chamber 3B which are provided one behind the otherbetween the treatment section 2 and the exposure section 4 and providedwith a first wafer transfer unit 26A and a second wafer transfer unit26B respectively.

To the rear side of the carrier station 1, the treatment section 2 isconnected which is surrounded at the periphery by a housing 20. In thetreatment section 2, shelf units U1, U2, U3 in each of which units ofheating and cooling systems are multi-tiered and main transfer devicesA2, A3 that transfer the wafer W between the units in the shelf unitsU1, U2, U3 and units in solution treatment units U4, U5 are providedarranged alternately in sequence from the front side. Further, each ofthe main devices A2, A3 is placed in a space surrounded by a partitionwall 21 composed of face portions on the side of the shelf units U1, U2,U3 which are arranged in a forward and backward direction as viewed fromthe carrier station 1, one face portion on the side of, for example, thelater-described solution treatment unit U4, U5 on the right side, and arear face portion forming one face on the left side. Further,temperature and humidity regulating units 22 each including atemperature regulator for treatment solutions used in the units, a ductfor regulating the temperature and humidity and so on are disposedrespectively between the carrier station 1 and the treatment section 2and between the treatment section 2 and the interface section 3.

The shelf units U1, U2, U3 are configured such that various kinds ofunits to perform pre-processing and post-processing of the treatmentsperformed in the solution treatment units U4, U5 are multi-tiered, forexample, ten-tiered, in which the combination of the units includes aheating unit (not illustrated) that heats (bakes) the wafer W, a coolingunit (not illustrated) that cools the wafer W, and so on. Further, thesolution treatment units U4, U5 are configured such that anti-reflectionfilm coating units (BCT) 23 that apply an anti-reflection film, coatingunits (COT) 24, developing units (DEV) 25 that apply a developingsolution to the wafer W to perform developing treatment and so on aremulti-tiered, for example, five-tiered on chemical storage units for theresist solution, the developing solution and so on, for example, asillustrated in FIG. 1. A developing treatment apparatus 50 according tothis invention is provided in the developing unit (DEV) 25. Further, theanti-reflection film coating units (BCT) 23, the coating units (COT) 24,and the developing units (DEV) 25 correspond to modules in thisinvention.

On the basis of an example, the flow of the wafer in the coating anddeveloping treatment apparatus configured as described above will bebriefly described referring to FIG. 1 and FIG. 2. First, when thecarrier 10 housing, for example, 25 wafers W is mounted on the mountingpart 11, the lid body of the carrier 10 is removed together with theopening/closing part 12, and a wafer W is taken out by the deliverydevice A1. The wafer W is delivered via a delivery unit (notillustrated) forming one tier in the shelf unit U1 to the main transferdevice A2, subjected, for example, to anti-reflection film formingtreatment and cooling processing as the pre-processing of the coatingtreatment, and then coated with a resist solution in the coating unit(COT) 24. Subsequently, by the main transfer device A2, the wafer W isheated (baking processing) in the heating unit forming one tier in oneof the shelf units U1 to U3, cooled, and then carried via the deliveryunit in the shelf unit U3 into the interface section 3. In the interfacesection 3, the wafer W is transferred by the first wafer transfer unit26A and the second wafer transfer unit 26B in the first transfer chamber3A and the second transfer chamber 3B to the exposure section 4, andsubjected to exposure by an exposure device (not illustrated) disposedto face the front surface of the wafer W. After the exposure, the waferW is transferred in a reverse route to the main transfer device A2 anddeveloped in the developing unit (DEV) 25, whereby a pattern is formedon the wafer W. Thereafter, the wafer W is returned to the originalcarrier 10 mounted on the mounting part 11.

First Embodiment

Next, the developing treatment apparatus 50 of the first embodimentaccording to this invention will be described. As illustrated in FIG. 3Aand FIG. 4, the developing treatment apparatus 50 includes a spin chuck40 forming a substrate holding part that horizontally holds the wafer Wby absorbing and suction-holding the central portion on the rear surfaceside thereof, in a casing 51 having a transfer-in/out port 51 a for thewafer W. Note that at the transfer-in/out port 51 a, a shutter 51 b isprovided to be able to open and close.

The spin chuck 40 is connected via a shaft part 41 to a rotary drivemechanism 42 such as a servo motor or the like, and is configured to berotatable, by the rotary drive mechanism 42, around a vertical axis Owhile holding the wafer W. Note that the rotary drive mechanism 42 iselectrically connected to a controller 60 corresponding to a controlunit of this invention so that the number of rotations of the spin chuck40 is controlled based on a control signal from the controller 60. Inthis case, by the controller 60, the number of rotations of the spinchuck 40 when using the developing solution for a later-describedpositive resist is controlled, for example, to 3,000 rpm and the numberof rotations of the spin chuck 40 when using the developing solution fora later-described negative resist is controlled, for example, to 2,000rpm, so that the number of rotations of the spin chuck 40 when using thedeveloping solution for the positive resist is set to be larger (faster)than the number of rotations of the spin chuck 40 when using thedeveloping solution for the negative resist.

The controller 60 is electrically connected to the main transfer devicesA2, A3 and a later-described raising and lowering mechanism 15 so thatthe main transfer devices A2, A3 and the raising and lowering mechanism15 are controlled based on control signals from the controller 60.

In this case, as illustrated in FIG. 3A, three (two of them areillustrated in the drawing) support pins 13 being a substrate supportmember that supports the wafer W to be able to raise and lower the waferW with respect to the spin chuck 40 are erected on an annular holdingplate 14 surrounding the shaft part 41 below a wafer holding part of thespin chuck 40. The holding plate 14 is formed to be able to rise andlower in the vertical direction by means of the raising and loweringmechanism 15 such as a cylinder or the like. The raising and loweringmechanism 15 is controlled to raise and lower the holding plate 14 basedon a control signal from the controller 60 so that the support pins 13rise and lower with respect to the wafer holding part of the spin chuck40 with the rising and lowering of the holding plate 14.

More specifically, the controller 60 drives the raising and loweringmechanism 15 to raise the support pins 13, thereby moving the wafer Wafter the developing treatment held by the spin chuck 40 to a deliveryposition above the spin chuck 40. The controller 60 performs controlsuch that the wafer W in this state is delivered to the main transferdevice A2, the main transfer device A2 transfers the wafer W out of theapparatus, and the support pins 13 then receives an undeveloped wafer Wtransferred by the main transfer device A2 and are then lowered to mountthe wafer W on a holding surface of the spin chuck 40.

A cup body 43 formed in a bottomed circular shape with an upper sideopen is provided in a manner to surround a side part of the wafer W heldby the spin chuck 40. The cup body 43 has a bottom plate 43 a, an innerperipheral wall 43 b erected upward starting from an inner peripheralend of the bottom plate 43 a, an outer peripheral wall 43 c erectedupward starting from an outer peripheral end of the bottom plate 43 a,and an upper wall 43 d extending inward from the upper end of the outerperipheral wall 43 c, and is opened on the upper side of the innerperipheral wall 43 b. The cup body 43 has, in order from the innerperipheral side, a first side wall 43 e and a second side wall 43 fwhich are provided between the inner peripheral wall 43 b and the outerperipheral wall 43 c and erected upward from the bottom plate 43 a. Atthe upper end of the inner peripheral wall 43 b, a projection 43 g isprovided toward the inner peripheral side to fix the position of the cupbody 43 by holding the projection 43 g between a fixed cup 44 and aholding plate 46.

On the lower side of the wafer W held by the spin chuck 40, the fixedcup 44 in a cylindrical shape is provided. At an upper portion of thefixed cup 44, an apex portion whose cross section along the verticalaxis O of the spin chuck 40 is formed in a mount shape is provided. Atan outer peripheral end of a bottom plate 44 a of the fixed cup 44, aperipheral wall 44 b extending downward is provided. The peripheral wall44 b is disposed between the inner peripheral wall 43 b and the outerperipheral wall 43 c of the cup body 43.

In this case, as illustrated in FIG. 3B, the fixed cup 44 is desirablyconfigured to have an annular projection 44 c for gas/liquid separationlocated between a periphery of the wafer W held by the spin chuck 40 andan opening rim 45 d of a later-described movable cup 45. Note that theupper end of the annular projection 44 c is desirably located to beflush with or below the upper surface of the wafer W and located to beflush with or above the upper end of the opening rim 45 d of the movablecup 45 (FIG. 3C).

The annular projection 44 c for gas/liquid separation located betweenthe periphery of the wafer W held by the spin chuck 40 and the openingrim 45 d of the movable cup 45 is provided at the fixed cup 44 asdescribed above, thereby making it possible to prevent the developingsolution flowing down below the wafer W from intruding into a seconddeveloping solution drain pipeline 49 b when performing developingtreatment with the movable cup 45 lowered.

The fixed cup 44 may have, in place of the above structure, a structurein which an annular knife edge 44 d close to a lower surface of thewafer W is provided on the inner peripheral side of the annularprojection 44 c and a drainage passage 44 f communicating with thebottom of the cup body 43 is formed at the bottom of an annular recessedgroove 44 e formed between the annular projection 44 c and the annularknife edge 44 d, as illustrated in FIG. 3D.

This configuration makes it possible to trap the developing solutionflowing around to the rear surface side of the wafer W during thedeveloping treatment in the annular recessed groove 44 e and prevent itfrom flowing down below the wafer W. Further, the developing solutiontrapped in the annular recessed groove 44 e is drained to the bottom ofthe cup body 43 via the drainage passage 44 f.

The movable cup 45 is disposed in a space part 48 surrounded by thebottom plate 43 a, the outer peripheral wall 43 c, the upper wall 43 d,and the fixed cup 44. The movable cup 45 includes a tapered part 45 acomposed of tapered plates decreasing in diameter on the upper sidesuperposed at two tiers, a cylindrical partition 45 b provided on thelower side of the tapered part 45 a, and a projection 45 c attached tothe inner peripheral surface of the partition 45 b. The partition 45 bis provided between the peripheral wall 44 b of the fixed cup 44 and theouter peripheral wall 43 c of the cup body 43. Further, the projection45 c is attached to the inner peripheral surface of the partition 45 bsuch that the second side wall 43 f and the projection 45 c becomecloser to each other when the movable cup 45 is lowered and theprojection 45 c is located above the second side wall 43 f when themovable cup 45 is raised.

Above the movable cup 45, a raising and lowering part 47 to raise orlower the movable cup 45 is provided. When the movable cup 45 is raisedby the raising and lowering part 47, the movable cup 45 is moved so thatthe tip portion of the tapered part 45 a is located above the wafer Wheld by the spin chuck 45. When the movable cup 45 is lowered by theraising and lowering part 47, the movable cup 45 is moved so that thetip portion of the tapered part 45 a is located below the wafer W heldby the spin chuck 45. To the raising and lowering part 47, thecontroller 60 corresponding to its control unit is connected, so thatthe movable cup 45 is raised and lowered based on the control signalfrom the controller 60.

As illustrated in FIG. 6A and FIG. 6B, the space part 48 is composed ofan outer peripheral flow path 48 a surrounded by the upper wall 43 d,the outer peripheral wall 43 c, and the movable cup 45, and an innerperipheral flow path 48 b surrounded by the movable cup 45, the secondside wall 43 f, the bottom plate 43 a, and the fixed cup 44. Further, onthe lower side of the fixed cup 44, an exhaust flow path 48 c is formedwhich is surrounded by the fixed cup 44, the bottom plate 43 a, and theinner peripheral wall 43 b and communicates with the inner peripheralflow path 48 b.

At the bottom plate 43 a of the cup body 43, a first developing solutiondrain pipeline 49 a and the second developing solution drain pipeline 49b that drain a scattering developing solution. The first developingsolution drain pipeline 49 a is connected to the outer peripheral sideof the cup body 43 and communicates with the outer peripheral flow path48 a. Further, on the secondary side of the first developing solutiondrain pipeline 49 a, a developing solution opening/closing valve 32 aand a developing solution pump 33 a are provided. On the other hand, thesecond developing solution drain pipeline 49 b is connected to the innerperipheral side of the cup body 43 and communicates with the innerperipheral flow path 48 b. Further, on the secondary side of the seconddeveloping solution drain pipeline 49 b, a developing solutionopening/closing valve 32 b and a developing solution pump 33 b areprovided. The developing solution opening/closing valves 32 a, 32 bperform opening/closing operations based on signals from the controller60.

Here, the developing solution opening/closing valve 32 a and thedeveloping solution pump 33 a correspond to a first drain device in thisinvention, and the developing solution opening/closing valve 32 b andthe developing solution pump 33 b correspond to a second drain device inthis invention.

At the bottom plate 43 a of the cup body 43 and on the inner peripheralside of the first side wall 43 e, an exhaust pipeline 49 c to exhaustgas (mist) generated due to the scattering of the developing solution isprovided. The exhaust pipeline 49 c communicates with the exhaust flowpath 48 c and is provided with a mist opening/closing valve 32 c and amist pump 33 c on the secondary side (see FIG. 6A and FIG. 6B). The mistopening/closing valve 32 c performs an opening/closing operation basedon a signal from the controller 60.

On the other hand, on the upper side of the wafer W held by the spinchuck 40, a developing solution supply nozzle 54 (hereinafter, referredto as a developing nozzle 54) capable of rising and lowering andhorizontally moving is provided in a manner to face the central portionof the front surface of the wafer W via a gap. In this case, asillustrated in FIG. 5A, the developing nozzle 54 has, on the lower side,a positive developing solution supply nozzle 54 a that supplies(discharges) a developing solution for a positive resist (hereinafter,denoted by a positive developing solution) and a negative developingsolution supply nozzle 54 b that supplies (discharges) a developingsolution for a negative resist (hereinafter, denoted by a negativedeveloping solution).

Here, as the positive developing solution, for example,tetramethylammonium hydroxide (TMAH) is used. As the negative developingsolution, a developing solution containing an organic solvent is used,namely, polar solvents such as a ketone-based solvent, an ester-basedsolvent, an alcohol-based solvent, an amide-based solvent, anether-based solvent and the like and a hydrocarbon-based solvent and thelike can be used. In this embodiment, a developing solution containingbutyl acetate being an ester-based solvent is used.

The developing nozzle 54 is supported on one end side of a nozzle arm55A, and the other end side of the nozzle arm 55 is coupled to a movingbase 56A including a not-illustrated raising and lowering mechanism, andthe moving base 56A is configured to be movable in the lateral directionalong a guide member 58A extending in an X-direction, by a developingsolution supply nozzle moving mechanism 57A (hereinafter, referred to asa developing nozzle moving mechanism 57A) such as a ball screw, a timingbelt or the like. By moving the developing nozzle moving mechanism 57A,the developing nozzle 54 moves along a straight line (radius) startingfrom the central portion to the peripheral portion of the wafer W.

On the outside on one side of the cup body 43, a waiting part 59A forthe developing nozzle 54 is provided, and the nozzle tip portion of thedeveloping nozzle 54 is cleaned at the waiting part 59A.

On the upper side of the wafer W held by the spin chuck 40, a rinsesolution supply nozzle 61 (hereinafter, referred to as a rinse nozzle61) that supplies (discharges) a cleaning solution (rinse solution) isprovided to be capable of rising and lowering and horizontally moving ina manner to face the central portion of the front surface of the wafer Wvia a gap. The rinse nozzle 61 has, as illustrated in FIG. 5B, apositive cleaning solution supply nozzle (positive rinse solution supplynozzle) 61 a that supplies a rinse solution for the positive resist(hereinafter, referred to as a positive rinse solution) to the wafer Wand a negative cleaning solution supply nozzle (negative rinse solutionsupply nozzle) 61 b that supplies a rinse solution for the negativeresist (hereinafter, referred to as a negative rinse solution) to thewafer W.

Here, as the positive rinse solution, DIW (deionized water) is used.Further, as the negative rinse solution, an organic solvent, forexample, a rinse solution containing alcohol having an alkyl chainincluding at least one of a branch structure and a ring structure inwhich the number of carbons of the secondary or tertiary carbon atom inthe alkyl chain bonded to a hydroxyl group is at least 5, ordialkylether having at least one of an alkyl group in which the numberof carbons is at least 5 and a cycloalkyl group in which the number ofcarbons is at least 5 can be used. In this embodiment, a rinse solutioncontaining 4-methyl-2-pentanol (MIBC) is used.

The rinse nozzles 61 a, 61 b are held on one end side of the nozzle arm55B to be parallel with each other, and the other end side of the nozzlearm 55B is coupled to a moving base 56B including a not-illustratedraising and lowering mechanism, and the moving base 56B is configured tobe movable in the lateral direction along a guide member 58B extendingin the X-direction by a rinse solution supply nozzle moving mechanism57B (hereinafter, referred to as a rinse nozzle moving mechanism 57B)such as a ball screw, a timing belt or the like, namely, to be movablein the radial direction starting from the central portion to theperipheral portion of the wafer W. Note that on the outside on one sideof the cup body 43, a waiting part 59B for the rinse nozzle 61 isprovided.

The positive developing solution supply nozzle 54 a is connected to adeveloping solution supply source 71 a via a developing solution supplypipe 70 a provided with an opening/closing valve V1. Further, thenegative developing solution supply nozzle 54 b is connected to adeveloping solution supply source 71 b via a developing solution supplypipe 70 b provided with an opening/closing valve V2.

On the other hand, the positive rinse solution supply nozzle 61 a isconnected to a rinse solution supply source 77 a via a rinse solutionsupply pipe 76 a provided with an opening/closing valve V3. Further, thenegative rinse solution supply nozzle 61 b is connected to a rinsesolution supply source 77 b via a rinse solution supply pipe 76 bprovided with an opening/closing valve V4.

The moving bases 56A, 56B, the developing nozzle moving mechanism 57A,the rinse nozzle moving mechanism 57B, and the opening/closing valves V1to V4 are individually electrically connected to the controller 60 andconfigured such that the horizontal movement and raising and loweringmovement of the developing nozzle 54 and the rinse nozzle 61 and theopening/closing driving of the opening/closing valves V1 to V4 areperformed based on control signals which have been previously stored inthe controller 60. The controller 60 controls the opening/closingdriving of the opening/closing valves V1, V2 and thereby enables controlof supply of the developing solution from the developing nozzle 54 tothe wafer W, and controls the opening/closing driving of theopening/closing valves V3, V4 and thereby enables control of supply ofthe rinse solution from the rinse nozzle 61 to the wafer W.

Next, the waiting parts 59A, 59B will be described based on FIG. 4 andFIG. 5A, FIG. 5B.

The waiting part 59A is provided on the outer peripheral side of the cupbody 43 and is formed to allow the developing nozzle 54 to be insertedtherein from above. The waiting part 59A has a storage part 59 c thatstores a residue of the positive developing solution discharged from thepositive developing solution supply nozzle 54 a and a storage part 59 dthat stores a residue of the negative developing solution dischargedfrom the negative developing solution supply nozzle 54 b, and thestorage parts 59 c, 59 d are separated from each other by a separationwall 59 e. A drain pipeline 62 a that drains the positive developingsolution communicates with the storage part 59 c, and a drain pipeline62 b that drains the negative developing solution communicates with thestorage part 59 d. The developing nozzle 54 is inserted into the waitingpart 59A by the moving base 56A moving in the vertical direction and thedeveloping nozzle moving mechanism 57A, and cleaning and so on of thenozzle tip portion of the developing nozzle 54 are performed at thewaiting part 59A.

The waiting part 59B is provided on the outer peripheral side of the cupbody 43 and is formed to allow the rinse nozzle 61 to be insertedtherein from above. The waiting part 59B has a storage part 59 f thatstores a residue of the positive rinse solution discharged from thepositive rinse solution supply nozzle 61 a and a storage part 59 g thatstores a residue of the negative rinse solution discharged from thenegative rinse solution supply nozzle 61 b, and the storage parts 59 f,59 g are separated from each other by a separation wall 59 h. A drainpipeline 62 c that drains the positive rinse solution communicates withthe storage part 59 f, and a drain pipeline 62 d that drains thenegative rinse solution communicates with the storage part 59 g. Therinse nozzle 61 is inserted into the waiting part 59B by the moving base56B moving in the vertical direction and the rinse nozzle movingmechanism 57B, and cleaning and so on of the nozzle tip portion of therinse nozzle 61 are performed at the waiting part 59B.

Next, based on the FIG. 6A, FIG. 6B, draining of the developing solutionin the first embodiment will be described. FIG. 6A illustrates drainpathways for the developing solution and gas (mist) generated due toscattering of the developing solution in the case of a positivedeveloping treatment of supplying the positive developing solution fromabove the wafer W. FIG. 6B illustrates pathways for the developingsolution and mist in the case of a negative developing treatment ofsupplying the negative developing solution from above the wafer W. Solidlines in FIG. 6A, FIG. 6B illustrate the flow paths of the developingsolution and broken lines illustrate the flow paths of the mist.

When the movable cup 45 has been moved up (in the case of the positivedeveloping treatment) as illustrated in FIG. 6A, the positive developingsolution and the mist are introduced into the inner peripheral flow path48 b. In this event, based on the signals from the controller 60, thedeveloping solution opening/closing valve 32 a is closed, the developingsolution opening/closing valve 32 b is opened, and the developingsolution pump 33 b is driven. Thus, the developing solution introducedinto the inner peripheral flow path 48 b is drained from the seconddeveloping solution drain pipeline 49 b. Based on the signals from thecontroller 60, the mist opening/closing valve 32 c is opened and themist pump 33 c is driven. Thus, the mist introduced into the exhaustflow path 48 c is exhausted from the exhaust pipeline 49 c.

In the positive developing treatment, based on the signal from thecontroller 60, the rotary drive mechanism 42 is driven to rotate thespin chuck 40 at a high speed, for example, at a number of rotations of3,000 rpm. By rotating the spin chuck 40 at a high speed as describedabove, the internal pressure in the cup body 43 increases, but there isan area of the outer peripheral flow path 48 a (negative treatmentarea), which is brought into a negative pressure, outside the cup body43, so that there is no gas flow going out of the cup body 43.

When the movable cup 45 has been moved down (in the case of the negativedeveloping treatment) as illustrated in FIG. 6B, the negative developingsolution and the mist are introduced into the outer peripheral flow path48 a. In this event, based on the signals from the controller 60, thedeveloping solution opening/closing valve 32 a is opened, the developingsolution opening/closing valve 32 b is closed, and the developingsolution pump 33 a is driven. Thus, the developing solution introducedinto the outer peripheral flow path 48 a is drained from the firstdeveloping solution drain pipeline 49 a. Further, based on the signalsfrom the controller 60, the mist opening/closing valve 32 c is openedand the mist pump 33 c is driven. Thus, the mist introduced into theexhaust flow path 48 c is exhausted from the exhaust pipeline 49 c.

In the negative developing treatment, based on the signal from thecontroller 60, the rotary drive mechanism 42 is driven to rotate thespin chuck 40 at a speed lower than that in the positive developingtreatment, for example, at a number of rotations of 2,000 rpm. Byrotating the spin chuck 40 at the speed lower than that in the positivedeveloping treatment as described above, the internal pressure in thecup body 43 hardly increases, and there is no area brought into apositive pressure inside the cup body 43, so that there is no gas flowgoing out of the cup body 43.

According to the first embodiment, the movable cup 45 is raised, whenusing the positive developing solution, to introduce the developingsolution and the mist into the inner peripheral flow path 48 b and themovable cup 45 is lowered, when using the negative developing solution,to introduce the developing solution and the mist into the outerperipheral flow path 48 a, thereby ensuring that the developingtreatment apparatus 50 installed in one module performs drain treatmentof the developing solution without mixing the positive developingsolution and negative developing solution. Thus, the number of modulesinstalled in the developing treatment apparatus can be reduced toprovide an effect of reducing the size of the developing treatmentapparatus.

Further, according to the first embodiment, the first and seconddeveloping solution drain pipelines 49 a, 49 b are provided with therespective developing solution pumps 33 a, 33 b and developing solutionopening/closing valves 32 a, 32 b. When the developing solution pump 33a is driven and the developing solution opening/closing valve 32 a isopened, driving of the developing solution pump 33 b is stopped and thedeveloping solution opening/closing valve 32 b is closed, whereas whenthe developing solution pump 33 b is driven and the developing solutionopening/closing valve 32 b is opened, driving of the developing solutionpump 33 a is stopped and the developing solution opening/closing valve32 a is closed, thereby providing an effect of increasing the efficiencyof drain treatment of the developing solution without mixing thepositive developing solution and the negative developing solution.

Second Embodiment

Next, a developing treatment apparatus 50 of the second embodimentaccording to this invention will be described based on FIG. 7, FIG. 8A,FIG. 8B. Note that the same contents as those of the developingtreatment apparatus 50 illustrated in FIG. 3A, FIG. 6A, FIG. 6B aregiven the same numerals as those in FIG. 3A, FIG. 6A, FIG. 6B, and thedescription thereof will be omitted.

As illustrated in FIG. 7, a movable cup 85 of the second embodiment isdifferent from the movable cup 45 of the first embodiment in that atapered part 85 a forms one tier and that the projection 45 c is notprovided at the inner peripheral surface of a partition 85 b. Further, acup body 43 of the second embodiment is different from the cup body 43of the first embodiment in that the second side wall 43 f is notprovided.

Draining of the developing solution in the second embodiment will bedescribed based on FIG. 8A, FIG. 8B.

When the movable cup 85 has been moved up (in the case of the positivedeveloping treatment) as illustrated in FIG. 8A, the positive developingsolution and the mist are introduced into the inner peripheral flow path48 b. In this event, based on the signals from the controller 60, thedeveloping solution opening/closing valve 32 b is closed, the developingsolution opening/closing valve 32 a is opened, and the developingsolution pump 33 a is driven. Thus, the developing solution introducedinto the inner peripheral flow path 48 b is drained from the firstdeveloping solution drain pipeline 49 a.

When the movable cup 45 has been moved down (in the case of the negativedeveloping treatment) as illustrated in FIG. 8B, the negative developingsolution and the mist are introduced into the outer peripheral flow path48 a and the inner peripheral flow path 48 b. In this event, based onthe signals from the controller 60, the developing solutionopening/closing valve 32 a is closed, the developing solutionopening/closing valve 32 b is opened, and the developing solution pump33 b is driven. Thus, the developing solution introduced into the outerperipheral flow path 48 a is drained from the second developing solutiondrain pipeline 49 b. Further, based on the signals from the controller60, the mist opening/closing valve 32 c is opened and the mist pump 33 cis driven. Thus, the mist introduced into the exhaust flow path 48 c isexhausted from the exhaust pipeline 49 c.

According to the second embodiment, even if the positive drain pipelineand the negative drain pipeline are reversed, one developing treatmentapparatus 50 installed in one module can perform drain treatment of thedeveloping solution without mixing the positive developing solution andthe negative developing solution as in the first embodiment. Therefore,the number of modules installed in the developing treatment apparatuscan be reduced to provide an effect of reducing the size of thedeveloping treatment apparatus as in the first embodiment.

When the developing solution pump 33 a is driven and the developingsolution opening/closing valve 32 a is opened, driving of the developingsolution pump 33 b is stopped and the developing solutionopening/closing valve 32 b is closed, whereas when the developingsolution pump 33 b is driven and the developing solution opening/closingvalve 32 b is opened, driving of the developing solution pump 33 a isstopped and the developing solution opening/closing valve 32 a isclosed, thereby providing an effect of increasing the efficiency ofdrain treatment of the developing solution without mixing the positivedeveloping solution and the negative developing solution. Note thatsince the other structure in the second embodiment is the same as thatof the first embodiment, the same effects as those in the firstembodiment can be obtained.

Third Embodiment

Next, a developing treatment apparatus 50 of the third embodimentaccording to this invention will be described based on FIG. 9, FIG. 10A,FIG. 10B. One-dotted chain lines in FIG. 10A, FIG. 10B illustrate theflow paths of the rinse solution. Note that the same contents as thoseof the developing treatment apparatus 50 illustrated in FIG. 3A, FIG.6A, FIG. 6B are given the same numerals as those in FIG. 3A, FIG. 6A,FIG. 6B, and the description thereof will be omitted.

As illustrated in FIG. 9, a first developing solution drain pipeline 89a of the third embodiment is connected to the outside of an outer wall90 a concentric therewith erected on the bottom plate 43 a of the cupbody 43, and a second developing solution drain pipeline 89 b isconnected to the inside of an inner wall 90 b concentric therewitherected on the bottom plate 43 a of the cup body 43. Further, a portionsurrounded by the outer wall 90 a and the outer peripheral wall 43 ccorresponds to a connecting part 99 a of the first developing solutiondrain pipeline 89 a, and a portion surrounded by the inner wall 90 b andthe inner peripheral wall 43 b corresponds to a connecting part 99 b ofthe second developing solution drain pipeline 89 b. Accordingly, theconnecting part 99 a of the first developing solution drain pipeline 89a and the connecting part 99 b of the second developing solution drainpipeline 89 b are formed to detour upward.

At the outer peripheral wall 43 c of the cup body 43, a cleaningsolution supply nozzle 81 is provided which supplies the cup body 43with the rinse solution stored in a not-illustrated rinse solutionstorage tank. Further, between the outer wall 90 a and the inner wall 90b of the third embodiment, a cleaning solution drain pipeline (sometimesreferred to as a rinse solution drain pipeline) 49 d that drains therinse solution is provided, and the rinse solution drain pipeline 49 dis provided with a cleaning solution opening/closing valve 32 d.

When the positive rinse solution is supplied to the wafer W coated withthe positive developing solution when the movable cup 45 has been movedup (in the case of the positive developing treatment) as illustrated inFIG. 10(a), the positive rinse solution scattering from the wafer W isintroduced into the inner peripheral flow path 48 b. The introducedpositive rinse solution is stored in a lower flow path 91 surrounded bythe outer wall 90 a, the inner wall 90 b, and the bottom plate 43 a.

On the other hand, when the negative rinse solution is supplied to thewafer W coated with the negative developing solution when the movablecup 45 has been moved down (in the case of the negative developingtreatment) as illustrated in FIG. 10B, the negative rinse solutionscattering from the wafer W is introduced into the outer peripheral flowpath 48 a. The introduced negative rinse solution is stored in the lowerflow path 91.

Further, a rinse solution to clean the positive developing solution orthe negative developing solution adhering to the cup body 43 when thepositive developing solution or the negative developing solution issupplied to the wafer W is supplied from the cleaning solution supplynozzle 81 and stored in the lower flow path 91.

Then, by closing the developing solution opening/closing valves 32 a, 32b and opening the cleaning solution opening/closing valve 32 d, thepositive rinse solution or the negative rinse solution stored in thelower flow path 91 is drained from the rinse solution drain pipeline 49d.

The above-described supply of the rinse solution from the cleaningsolution supply nozzle 81, storage of the rinses solution in the lowerflow path 91 and draining of the rinse solution are performed after thepositive developing solution, the negative developing solution or thepositive rinse solution is supplied to the wafer W. In this event, inorder to reduce the developing treatment time on the wafer W developedin the developing unit (DEV) 25, the supply of the rinse solution fromthe cleaning solution supply nozzle 81, storage of the rinses solutionin the lower flow path 91 and draining of the rinse solution may beperformed at the same time as the transfer of the wafer W.

According to the third embodiment, the bottom plate 43 a, the outer wall90 a, the inner wall 90 b and the outer peripheral wall 43 c surroundingthe lower flow path 91 can be cleaned by storing the rinse solution inthe lower flow path 91 and draining the rinse solution from the rinsesolution drain pipeline 49 d, thereby providing an effect of preventingmixture of the positive developing solution, the negative developingsolution, and the negative rinse solution in addition to the effectsobtained in the first embodiment. Note that since the other structure inthe third embodiment is the same as that of the first embodiment, thesame effects as those in the first embodiment can be obtained.

Fourth Embodiment

Next, a developing treatment apparatus 50 of the fourth embodimentaccording to this invention will be described based on FIG. 11. Notethat the same contents as those of the developing treatment apparatus 50illustrated in FIG. 3A are given the same numerals as those in FIG. 3A,and the description thereof will be omitted.

As illustrated in FIG. 11, a bottom plate 43 a of a cup body 43 of thefourth embodiment is formed in an inclined shape. Therefore, the rinsesolution stored in the lower flow path 91 on the left side in FIG. 11flows through the cup body 43 formed in the inclined shape and thenflows into a lower flow path 92 on the right side in FIG. 11. By openinga cleaning solution opening/closing valve 32 e provided on a cleaningsolution drain pipeline 49 e formed at the bottom plate 43 a, the rinsesolution stored in the lower flow path 92 is drained from the rinsesolution drain pipeline 49 e.

According to the fourth embodiment, the rinse solution can be circulatedin the whole cup body 43 by spirally circulating the rinse solutionstored in the lower flow path 91 toward the lower flow path 92, therebyproviding an effect of efficiently cleaning the bottom plate 43 a, theouter wall 43 c and the inner wall 43 b surrounding the lower flow paths91, 92 using the rinse solution in addition of the effects obtained inthe first embodiment. Note that since the other structure in the fourthembodiment is the same as that in the first embodiment, the same effectsas those in the first embodiment can be obtained.

Fifth Embodiment

Next, a developing treatment apparatus 50 of the fifth embodimentaccording to this invention will be described based on FIG. 12, FIG.13A, and FIG. 13B. Note that the same contents as those of thedeveloping treatment apparatus 50 illustrated in FIG. 3A, FIG. 6A, FIG.6B are given the same numerals as those in FIG. 3A, FIG. 6A, FIG. 6B,and the description thereof will be omitted.

As illustrated in FIG. 12, on the secondary side of the exhaust pipeline49 c of the fifth embodiment, a positive exhaust pipeline 93 a toexhaust the mist generated when using the positive developing solutionand a negative exhaust pipeline 93 b to exhaust the mist generated whenusing the negative developing solution are provided. Further, theexhaust pipeline 49 c is provided with a switching damper 93 c thatcauses only one of the positive exhaust pipeline 93 a and the negativeexhaust pipeline 93 b to communicate with the exhaust flow path 48 c ofthe cup body 43. The switching damper 93 c is connected to thecontroller 60 and operates to close one of the positive exhaust pipeline93 a and the negative exhaust pipeline 93 b based on the signal from thecontroller 60. Further, the positive exhaust pipeline 93 a is providedwith an exhaust opening/closing valve 32 f and an exhaust pump 33 d, andthe negative exhaust pipeline 93 b is provided with an exhaustopening/closing valve 32 g and an exhaust pump 33 e.

When the movable cup 45 has been moved up (in the case of the positivedeveloping treatment) as illustrated in FIG. 13A, the positivedeveloping solution scattering from the wafer W is introduced into theinner peripheral flow path 48 b and the mist is introduced into theexhaust flow path 48 c. In this case, based on the signal from thecontroller 60 corresponding to a switching damper control unit, theswitching damper 93 c closes the negative exhaust pipeline 93 b, so thatthe positive exhaust pipeline 93 a communicates with the cup body 43.Further, the exhaust opening/closing valve 32 f is opened, the exhaustpump 33 d is driven, and the exhaust opening/closing valve 32 g isclosed. Therefore, the mist staying in the exhaust flow path 48 c isexhausted via the positive exhaust pipeline 93 a.

Next, when the movable cup 45 has been moved down (in the case of thenegative developing treatment) as illustrated in FIG. 13B, the negativedeveloping solution scattering from the wafer W is introduced into theouter peripheral flow path 48 a and the mist is introduced into theexhaust flow path 48 c. In this case, the switching damper 93 c closesthe positive exhaust pipeline 93 a, so that the negative exhaustpipeline 93 b communicates with the cup body 43. Further, the exhaustopening/closing valve 32 g is opened, the exhaust pump 33 e is driven,and the exhaust opening/closing valve 32 f is closed. Therefore, themist staying in the exhaust flow path 48 c is exhausted via the negativeexhaust pipeline 93 b.

According to the fifth embodiment, when the mist staying in the exhaustflow path 48 c is caused from the scattering positive developingsolution, the mist is exhausted via the positive exhaust pipeline 93 a.On the other hand, when the mist staying in the exhaust flow path 48 cis caused from the scattering negative developing solution, the mist isexhausted via the negative exhaust pipeline 93 b. Therefore, it ispossible to obtain an effect of being able to separately exhausting themist caused from the positive developing solution and the mist causedfrom the negative developing solution without mixing them. Note thatsince the other structure in the fifth embodiment is the same as that ofthe first embodiment, the same effects as those in the first embodimentcan be obtained.

Sixth Embodiment

Next, a developing treatment apparatus 50 of the sixth embodimentaccording to this invention will be described based on FIG. 14A, FIG.14B.

As illustrated in FIG. 14A, FIG. 14B, two developing treatmentapparatuses 50A, 50B are provided in one module in the sixth embodiment.In the developing treatment apparatus 50A, the positive developingsolution supply nozzle 54 a capable of supplying the positive developingsolution and the positive rinse solution supply nozzle 61 a capable ofsupplying the positive rinse solution are provided. In the developingtreatment apparatus 50B, the negative developing solution supply nozzle54 b capable of supplying the negative developing solution and thenegative rinse solution supply nozzle 61 b capable of supplying thenegative rinse solution are provided.

To the developing solution supply nozzle 54, the developing solutionsupply pipes 70 a, 70 b are coupled, and the developing solution supplypipes 70 a, 70 b are provided with the opening/closing valves V1, V2 andconnected to the developing solution supply sources 71 a, 71 b. Further,to the rinse nozzle 61, the rinse solution supply pipes 76 a 76 b arecoupled, and the rinse solution supply pipes 76 a 76 b are provided withthe opening/closing valves V3, V4 and connected to the rinse solutionsupply sources 77 a, 77 b. Further, the first developing solution drainpipeline and the second developing solution drain pipeline need to beseparately provided in the respective developing treatment apparatuses50A, 50B.

Accordingly, the supply of the positive developing solution to the waferW in the developing treatment apparatus 50A is performed by the positivedeveloping solution supply nozzle 54 a and the supply of the positiverinse solution is performed by the positive rinse solution supply nozzle61 a. The supply of the negative developing solution to the wafer W inthe developing treatment apparatus 50B is performed by the negativedeveloping solution supply nozzle 54 b and the supply of the negativerinse solution is performed by the negative rinse solution supply nozzle61 b.

According to the sixth embodiment, when the two developing treatmentapparatuses 50A, 50B are installed in one module, the developingtreatment and the rinse treatment can be performed at the same time ineach of the developing treatment apparatuses 50A, 50B. Therefore, aneffect of efficiently performing the developing treatment and the rinsetreatment can be obtained in addition to the effects obtained in thefirst embodiment. For example, when both the wafer W which the developtreatment with the positive developing solution is applied and the waferW which the develop treatment with the negative developing solution isapplied are carried into the processing system, the developing treatmentapparatuses 50A is used for the develop treatment with the positivedeveloping solution, and the developing treatment apparatuses 50B isused for the develop treatment with the negative developing solution.Herewith, the develop treatment can be performed efficiently. On theother hand, when only the wafer W which the develop treatment with thepositive developing solution is applied carried into the processingsystem, both the developing treatment apparatuses 50A, 50B are used forthe develop treatment with the positive developing solution, and whenonly the wafer W which the develop treatment with the negativedeveloping solution is applied carried into the processing system, boththe developing treatment apparatuses 50A, 50B are used for the developtreatment with the negative developing solution. As a result, overallprocessing capacity of the processing system can be increased.

Seventh Embodiment

Next, a developing treatment apparatus 50 of the seventh embodimentaccording to this invention will be described based on FIG. 15A, FIG.15B.

As illustrated in FIG. 15A, FIG. 15B, two developing treatmentapparatuses 50A, 50B are installed in one module in the seventhembodiment. In the developing treatment apparatuses 50A, 50B, positivedeveloping solution supply nozzles 94 a, 94 b capable of supplying thepositive developing solution and positive rinse solution supply nozzles95 a, 95 b capable of supplying the positive rinse solution are providedrespectively. Further, a negative treatment solution supply nozzle 96capable of supplying the negative developing solution and the negativerinse solution is shared between the developing treatment apparatuses50A, 50B.

To the positive developing solution supply nozzles 94 a, 94 b, positivedeveloping solution supply pipes 70 c, 70 d are connected. Further, thepositive developing solution supply pipe 70 c is provided with anopening/closing valve V5 and connected with a positive developingsolution supply source 71 c, and the positive developing solution supplypipe 70 d is provided with an opening/closing valve V6 and connectedwith a positive developing solution supply source 71 d.

To the positive rinse solution supply nozzles 95 a, 95 b, positive rinsesolution supply pipes 76 c, 76 d are connected. The positive rinsesolution supply pipe 76 c is provided with an opening/closing valve V7and connected with a positive rinse solution supply source 77 c, and thepositive rinse solution supply pipe 76 d is provided with anopening/closing valve V8 and connected with a positive rinse g solutionsupply source 77 d. Further, to the negative treatment solution supplynozzle 96, a negative developing solution supply pipe 70 e and anegative rinse solution supply pipes 76 e are connected. The negativedeveloping solution supply pipe 70 e and the negative rinse solutionsupply pipes 76 e are provided with opening/closing valves V9, V10 andconnected with a negative developing solution supply source 71 e and anegative rinse solution supply source 77 e.

Accordingly, in the developing treatment apparatus 50A, the supply ofthe positive developing solution to the wafer W is performed by thepositive developing solution supply nozzle 94 a and the supply of thepositive rinse solution is performed by the positive rinse solutionsupply nozzle 95 a. In the developing treatment apparatus 50B, thesupply of the positive developing solution to the wafer W is performedby the positive developing solution supply nozzle 94 b and the supply ofthe positive rinse solution is performed by the positive rinse solutionsupply nozzle 95 b. On the other hand, the supply of the negativedeveloping solution and the negative rinse solution to the wafer W inthe developing treatment apparatuses 50A, 50B is performed by thenegative treatment solution supply nozzle 96.

According to the seventh embodiment, a set of the positive developingnozzle and rinse nozzle are provided for each of the developingtreatment apparatuses 50A, 50B and the negative treatment solutionsupply nozzle 96 shared between the developing treatment apparatuses50A, 50B is provided, thus ensuring that an existing developingtreatment apparatus using the positive developing solution can cope withthe positive developing solution and the negative developing solution byincluding the negative treatment solution supply nozzle 96. Accordingly,an effect of capable of easily assembling the developing treatmentapparatus capable of efficiently performing the developing treatment andthe rinse treatment can be obtained in addition to the effects obtainedin the first embodiment.

<Backflow Prevention Mechanism for Drainage>

Next, a backflow prevention mechanism 100 for drainage will be describedbased on FIG. 16. As illustrated in FIG. 16, the backflow preventionmechanism 100 for the positive developing solution is provided at thesecond developing solution drain pipeline 49 b and includes an exhaustport 110 that exhausts air inside the second developing solution drainpipeline 49 b and a check valve CV1 provided at the exhaust port 110.Further, a backflow prevention mechanism 101 for the negative developingsolution is provided at the first developing solution drain pipeline 49a and includes an exhaust port 102 that exhausts air inside the firstdeveloping solution drain pipeline 49 a and a check valve CV2 providedat the exhaust port 102.

To the first developing solution drain pipeline 49 a and the seconddeveloping solution drain pipeline 49 b, the waiting parts 59A for thedeveloping nozzles 54 provided in the developing treatment apparatuses50A, 50B via the drain pipelines 62 a, 62 b are connected. Further, tothe first developing solution drain pipeline 49 a and the seconddeveloping solution drain pipeline 49 b, not-illustrated cup bodiesprovided in the respective developing treatment apparatuses 50A, 50B areconnected. Further, to the rinse solution drain pipeline 49 d, thewaiting parts 59B for the rinse solution supply nozzles via drainpipelines 62 c, 62 d are connected.

The backflow prevention mechanisms 100, 101 having the exhaust ports110, 102 at the second developing solution drain pipeline 49 b and thefirst developing solution drain pipeline 49 a are provided as describedabove, so that even if pressure is applied on the drainage flowingthrough the first developing solution drain pipeline 49 a and the seconddeveloping solution drain pipeline 49 b, the pressure can be releasedthrough the exhaust ports 102, 110. This makes it possible to preventbackflow of the drainage flowing through the first developing solutiondrain pipeline 49 a and the second developing solution drain pipeline 49b.

Next, as for the positive developing treatment and the negativedeveloping treatment in this invention, the case where each of them iscontinuously performed and the case where they are performed variouslychanged will be described referring to FIG. 17A to FIG. 20I.

<Positive-Positive Developing Treatments>

When the positive developing treatment is continuously performed, themovable cup 45 has been moved up at the point in time when the positivedeveloping treatment is completed as illustrated in FIG. 17A (S11, seeFIG. 17B). In this state, the support pins 13 are raised to move thewafer W on the spin chuck 40 to a wafer delivery position (S12, see FIG.17C). In this state, since the movable cup 45 has been raised, it ispossible to prevent particles from entering the movable cup 45 andadhering to the wafer W due to gas flow along with the raising of thesupport pins 13.

After the support pins 13 are raised, the movable cup 45 is lowered(S13, see FIG. 17D). Note that, in this case, the raising of the supportpins 13 and the lowering of the movable cup 45 may be performed at thesame time. By performing the raising of the support pins 13 and thelowering of the movable cup 45 at the same time, time can be reduced.

Then, the main transfer device A2 outside the developing apparatusenters the apparatus, and the wafer W supported by the support pins 13is delivered to the main transfer device A2 (S14, see FIG. 17E).Thereafter, the wafer W is transferred out by the main transfer deviceA2 (S15, see FIG. 17F).

Then, the main transfer device A2 holding an undeveloped wafer W entersthe apparatus (S16, see FIG. 17G), and the support pins 13 receive thewafer W (S17, see FIG. 17H). Thereafter, the main transfer device A2retreats from the apparatus.

Then, after the movable cup 45 is raised (S18, see FIG. 17I), thesupport pins 13 are lowered to mount the wafer W supported by thesupport pins 13 onto the spin chuck 40, and the next positive developingtreatment is started (S19, see FIG. 17J). By lowering the support pins13 with the movable cup 45 raised as described above, it is possible toprevent particles from entering the movable cup 45 and adhering to thewafer W due to gas flow along with the lowering of the support pins 13.

Note that, the raising of the movable cup 45 and the lowering of thesupport pins 13 may be performed at the same time. Thus, time can bereduced.

<Negative-Negative Developing Treatments>

When the negative developing treatment is continuously performed, themovable cup 45 has been moved down at the point in time when thenegative developing treatment is completed as illustrated in FIG. 18A(S21, see FIG. 18B). In this state, the support pins 13 are raised tomove the wafer W on the spin chuck 40 to the wafer delivery position(S22, see FIG. 18C).

Then, the main transfer device A2 outside the developing apparatusenters the apparatus, and the wafer W supported by the support pins 13is delivered to the main transfer device A2 (S23, see FIG. 18D).Thereafter, the wafer W is transferred out by the main transfer deviceA2 (S24, see FIG. 18E).

Then, the main transfer device A2 holding an undeveloped wafer W entersthe apparatus (S25, see FIG. 18F), and the support pins 13 receive thewafer W (S26, see FIG. 18G). Thereafter, the main transfer device A2retreats from the apparatus.

Then, the support pins 13 are lowered to mount the wafer W supported bythe support pins 13 onto the spin chuck 40, and the next negativedeveloping treatment is started (S27, see FIG. 18H).

<Positive-Negative Developing Treatments>

When the negative developing treatment is performed after the positivedeveloping treatment, the treatments are performed in an operationprocedure illustrated in FIG. 19A. Here, steps common to thepositive-positive developing treatments and the negative-negativedeveloping treatments will be described using the same numerals.

At the point in time when the positive developing treatment iscompleted, the movable cup 45 has been raised (S11, see FIG. 19B). Inthis state, the support pins 13 are raised to move the wafer W on thespin chuck 40 to the wafer delivery position (S12, see FIG. 19C). Inthis state, since the movable cup 45 has been raised, it is possible toprevent particles from entering the movable cup 45 and adhering to thewafer W due to gas flow along with the raising of the support pins 13.

After the support pins 13 are raised, the movable cup 45 is lowered(S13, see FIG. 19D). Note that, in this case, the raising of the supportpins 13 and the lowering of the movable cup 45 may be performed at thesame time. By performing the raising of the support pins 13 and thelowering of the movable cup 45 at the same time, time can be reduced.

Then, the main transfer device A2 outside the developing apparatusenters the apparatus, and the wafer W supported by the support pins 13is delivered to the main transfer device A2 (S14, see FIG. 19E).Thereafter, the wafer W is transferred out by the main transfer deviceA2 (S15, see FIG. 19F).

Then, the main transfer device A2 holding an undeveloped wafer W entersthe apparatus (S16, see FIG. 19G), and the support pins 13 receive thewafer W (S17, see FIG. 19H). Thereafter, the main transfer device A2retreats from the apparatus.

Then, the support pins 13 are lowered to mount the wafer W supported bythe support pins 13 onto the spin chuck 40, and the next negativedeveloping treatment is started (S27, see FIG. 19I).

<Negative-Positive Developing Treatments>

When the positive developing treatment is performed after the negativedeveloping treatment, the treatments are performed in an operationprocedure illustrated in FIG. 20A. Here, steps common to thepositive-positive developing treatments and the negative-negativedeveloping treatments will be described using the same numerals.

At the point in time when the negative developing treatment iscompleted, the movable cup 45 has been lowered (S21, see FIG. 20B). Inthis state, the support pins 13 are raised to move the wafer W on thespin chuck 40 to the wafer delivery position (S22, see FIG. 20C).

Then, the main transfer device A2 outside the developing apparatusenters the apparatus, and the wafer W supported by the support pins 13is delivered to the main transfer device A2 (S23, see FIG. 20D).Thereafter, the wafer W is transferred out by the main transfer deviceA2 (S24, see FIG. 20E).

Then, the main transfer device A2 holding an undeveloped wafer W entersthe apparatus (S25, see FIG. 20F), and the support pins 13 receive thewafer W (S26, see FIG. 20G). Thereafter, the main transfer device A2retreats from the apparatus.

Then, after the movable cup 45 is raised (S18, see FIG. 20H), thesupport pins 13 are lowered to mount the wafer W supported by thesupport pins 13 onto the spin chuck 40, and the next positive developingtreatment is started (S19, see FIG. 20I). By lowering the support pins13 with the movable cup 45 raised, it is possible to prevent particlesfrom entering the movable cup 45 and adhering to the wafer W due to gasflow along with the lowering of the support pins 13.

Note that, the raising of the movable cup 45 and the lowering of thesupport pins 13 may be performed at the same time. Thus, time can bereduced.

Other Embodiments

Examples of embodiments of this invention have been described, thisinvention is not limited to the embodiments but can take various forms.Though the positive developing solution is introduced when the movablecup 45 has been moved up and the negative developing solution isintroduced when the movable cup 45 has been moved down in the firstembodiment of this invention, the negative developing solution may beintroduced when the movable cup 45 has been moved up and the positivedeveloping solution may be introduced when the movable cup 45 has beenmoved down. In this case, the negative developing solution introducedinto the outer peripheral flow path 48 a in the first embodiment ischanged to the positive developing solution and the positive developingsolution introduced into the inner peripheral flow path 48 b is changedto the negative developing solution. Further, also in the secondembodiment of this invention, the negative developing solution may beintroduced when the movable cup 45 has been moved up and the positivedeveloping solution may be introduced when the movable cup 45 has beenmoved down. In this case, the negative developing solution introducedinto the outer peripheral flow path 48 a and the inner peripheral flowpath 48 b in the second embodiment is changed to the positive developingsolution and the positive developing solution introduced into the innerperipheral flow path 48 b is changed to the negative developingsolution.

Further, though the case where the two developing treatment apparatuses50A, 50B are provided in one module has been described in the sixthembodiment, three or more developing treatment apparatuses may beprovided in one module.

Preferred embodiments of the present invention have been described abovewith reference to the accompanying drawings, but the present inventionis not limited to the embodiments. It should be understood that variouschanges and modifications are readily apparent to those skilled in theart within the scope of the technical spirit as set forth in claims, andthose should also be covered by the technical scope of the presentinvention.

1. (canceled)
 2. A developing treatment apparatus for performingdevelopment by supplying a developing solution to a substrate having afront surface coated with a positive resist or a negative resist andthen subjected to exposure, the developing treatment apparatuscomprising: a substrate holding part that horizontally holds thesubstrate; a rotary drive mechanism that rotates the substrate holdingpart around a vertical axis; a positive developing solution supplynozzle that supplies a developing solution for the positive resist tothe front surface of the substrate held by the substrate holding part; anegative developing solution supply nozzle that supplies a developingsolution for the negative resist to the front surface of the substrateheld by the substrate holding part; a cup body that is formed in abottomed circular shape with an upper side open and collects thedeveloping solution scattering with rotation of the substrate; a firstdeveloping solution drain pipeline that is connected to an outerperipheral side of the cup body and drains one of the developingsolutions for the positive resist and the negative resist collected bythe cup body; a second developing solution drain pipeline that isconnected to an inner peripheral side of the cup body and drains anotherof the developing solutions for the positive resist and the negativeresist collected by the cup body; a fixed cup that has a peripheral wallbetween an inner peripheral wall of the cup body and an outer peripheralwall of the cup body and is formed on a lower side of the substrate heldby the substrate holding part; and a first drain device that is providedon the first developing solution drain pipeline and a second draindevice that is provided on the second developing solution drainpipeline, wherein the first drain device and the second drain device areconfigured to drain the one developing solution or the anotherdeveloping solution by driving one of the first drain device and thesecond drain device. 3-7. (canceled)
 8. The developing treatmentapparatus according to claim 2, wherein the first drain device and thesecond first drain device are composed of respective developing solutionpumps and developing solution opening/closing valves, and wherein whenthe developing solution pump communicating with one of the firstdeveloping solution drain pipeline and the second developing solutiondrain pipeline is driven and the developing solution opening/closingvalve communicating with the one of the first developing solution drainpipeline and the second developing solution drain pipeline is opened,driving of the developing solution pump communicating with another ofthe first developing solution drain pipeline and the second developingsolution drain pipeline is stopped and the developing solutionopening/closing valve communicating with the another of the firstdeveloping solution drain pipeline and the second developing solutiondrain pipeline is closed.
 9. (canceled)
 10. The developing treatmentapparatus according to claim 2, further comprising: a positive cleaningsolution supply nozzle that supplies a cleaning solution for thepositive resist to the front surface of the substrate held by thesubstrate holding part; a negative cleaning solution supply nozzle thatsupplies a cleaning solution for the negative resist to the frontsurface of the substrate held by the substrate holding part; and acleaning solution drain pipeline that drains the cleaning solutioncollected by the cup body that collects the cleaning solution scatteringwith rotation of the substrate, wherein the cleaning solution drainpipeline is connected to the cup body.
 11. (canceled)
 12. The developingtreatment apparatus according to claim 10, wherein a connecting part ofthe first developing solution drain pipeline and a connecting part ofthe second developing solution drain pipeline which are connected to thecup body are formed to detour upward.
 13. (canceled)
 14. The developingtreatment apparatus according to claim 10, further comprising: acleaning solution supply nozzle that supplies a cleaning solution to thecup body, wherein the cup body is configured to store the cleaningsolution supplied from the cleaning solution supply nozzle in the cupbody.
 15. (canceled)
 16. The developing treatment apparatus according toclaim 2, further comprising: a positive exhaust pipeline provided in anexhaust pipeline that exhausts mist generated due to the developingsolution scattering with rotation of the substrate and configured toexhaust gas generated due to the scattering of the developing solutionfor the positive resist; a negative exhaust pipeline provided in theexhaust pipeline and configured to exhaust gas generated due to thescattering of the developing solution for the negative resist; aswitching damper provided in the exhaust pipeline and configured toswitch connection between the cup body and one of the positive exhaustpipeline and the negative exhaust pipeline; and a damper control unitthat controls the switching damper, wherein the damper control unit isconfigured when using the developing solution for the positive resist,to move the switching damper to cause the positive exhaust pipeline andthe cup body to communicate with each other, and inhibit communicationbetween the negative exhaust pipeline and the cup body, and when usingthe developing solution for the negative resist, to move the switchingdamper to cause the negative exhaust pipeline and the cup body tocommunicate with each other, and inhibit communication between thepositive exhaust pipeline and the cup body.
 17. (canceled)
 18. Adeveloping treatment method using a developing treatment apparatus forperforming development by supplying a developing solution to a substratehaving a front surface coated with a positive resist or a negativeresist and then subjected to exposure, wherein the developing treatmentapparatus comprising: a substrate holding part that horizontally holdsthe substrate; a rotary drive mechanism that rotates the substrateholding part around a vertical axis; a positive developing solutionsupply nozzle that supplies a developing solution for the positiveresist to the front surface of the substrate held by the substrateholding part; a negative developing solution supply nozzle that suppliesa developing solution for the negative resist to the front surface ofthe substrate held by the substrate holding part; a cup body that isformed in a bottomed circular shape with an upper side open and collectsthe developing solution scattering with rotation of the substrate; afirst developing solution drain pipeline that is connected to an outerperipheral side of the cup body and drains one of the developingsolutions for the positive resist and the negative resist collected bythe cup body; a second developing solution drain pipeline that isconnected to an inner peripheral side of the cup body and drains anotherof the developing solutions for the positive resist and the negativeresist collected by the cup body; a fixed cup that has a peripheral wallbetween an inner peripheral wall of the cup body and an outer peripheralwall of the cup body and is formed on a lower side of the substrate heldby the substrate holding part; and a first drain device that is providedon the first developing solution drain pipeline and a second draindevice that is provided on the second developing solution drainpipeline, wherein the one developing solution or the another developingsolution is drained by driving one of the first drain device and thesecond drain device.